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| Composite Transistors XN4381 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 s Features q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -500 300 150 -55 to +150 Unit V V mA V V mA mW C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: CW Internal Connection 6 5 4 Tr1 1 2 3 C Tr2 0 to 0.05 UN1213 x UN1122 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN4381 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 3.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 0.8 150 47 1.0 +30% 1.2 4.9 0.2 80 0.25 V V V MHz k min 50 50 0.1 0.5 0.1 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -100mA IC = -100mA, IB = -5mA VCC = -5V, VB = - 0.5V, RL = 500 VCC = -5V, VB = -3.5V, RL = 500 VCB = -10V, IE = 50mA, f = 200MHz -30% 0.8 200 4.7 1.0 +30% 1.2 -4.9 - 0.2 50 - 0.25 V V V MHz k min -50 -50 -1 -1 -2 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN4381 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75C 25C -25C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -300 -100 XN4381 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 VCE= -10V hFE -- IC Ta=75C -250 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -0.01 -1 -25C Forward current transfer ratio hFE Collector current IC (mA) IB=-1.0mA -200 -0.9mA -0.8mA -150 -0.7mA -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 120 25C Ta=75C 80 -25C 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 24 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 20 Output current IO (A) 16 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 12 8 4 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 |
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